Electric-Field-Enhanced Neutralization of Deep Centers in GaAs

D. G. Eshchenko, V. G. Storchak, S. P. Cottrell, and E. Morenzoni
Phys. Rev. Lett. 103, 216601 – Published 17 November 2009

Abstract

The charge dynamics of hydrogenlike centers in semi-insulating GaAs have been studied by muon spin resonance in the presence of electric field and RF excitation. Electric-field-enhanced neutralization of deep electron and hole traps by track-induced hot carriers results in an increase of the excess electron’s or hole’s lifetimes. Similar processes may take place in semiconductor devices working at high voltages and/or under irradiation. As a consequence of the deep traps neutralization, the muonium (μ++e) center can capture a hole.

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  • Received 15 August 2009

DOI:https://doi.org/10.1103/PhysRevLett.103.216601

©2009 American Physical Society

Authors & Affiliations

D. G. Eshchenko1,2,*, V. G. Storchak3, S. P. Cottrell4, and E. Morenzoni2

  • 1Physik-Institut der Universität Zürich, Winterthurerstrasse 190, CH-8057, Zürich, Switzerland
  • 2Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
  • 3Russian Research Centre “Kurchatov Institute”, Kurchatov Sq. 46, Moscow 123182, Russia
  • 4ISIS Facility, Rutherford Appleton Laboratory, Oxfordshire OX11 OQX, United Kingdom

  • *dimitry.eshchenko@psi.ch Present address: Institute for Nuclear Research RAS, Moscow 117312, Russia.

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Vol. 103, Iss. 21 — 20 November 2009

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