Abstract
The charge dynamics of hydrogenlike centers in semi-insulating GaAs have been studied by muon spin resonance in the presence of electric field and RF excitation. Electric-field-enhanced neutralization of deep electron and hole traps by track-induced hot carriers results in an increase of the excess electron’s or hole’s lifetimes. Similar processes may take place in semiconductor devices working at high voltages and/or under irradiation. As a consequence of the deep traps neutralization, the muonium () center can capture a hole.
- Received 15 August 2009
DOI:https://doi.org/10.1103/PhysRevLett.103.216601
©2009 American Physical Society