Abstract
We demonstrate the dramatic effect of film thickness on the ferroelectric phase transition temperature in strained films grown on substrates. Using variable-temperature ultraviolet Raman spectroscopy enables measuring in films as thin as 1.6 nm, and a film thickness variation from 1.6 to 10 nm leads to tuning from 70 to about 925 K. Raman data are consistent with synchrotron x-ray scattering results, which indicate the presence of 180° domains below , and thermodynamic phase-field model calculations of as a function of thickness.
- Received 23 June 2009
DOI:https://doi.org/10.1103/PhysRevLett.103.177601
©2009 American Physical Society