Abstract
We show that the strongly spin-orbit coupled materials and and their derivatives belong to the topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that is a large spin-orbit-induced indirect bulk band gap () semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped exhibits similar topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.
- Received 18 June 2009
DOI:https://doi.org/10.1103/PhysRevLett.103.146401
©2009 American Physical Society