Profiling the Interface Electron Gas of LaAlO3/SrTiO3 Heterostructures with Hard X-Ray Photoelectron Spectroscopy

M. Sing, G. Berner, K. Goß, A. Müller, A. Ruff, A. Wetscherek, S. Thiel, J. Mannhart, S. A. Pauli, C. W. Schneider, P. R. Willmott, M. Gorgoi, F. Schäfers, and R. Claessen
Phys. Rev. Lett. 102, 176805 – Published 30 April 2009

Abstract

The conducting interface of LaAlO3/SrTiO3 heterostructures has been studied by hard x-ray photoelectron spectroscopy. From the Ti 2p signal and its angle dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO3 overlayers. Our results point to an electronic reconstruction in the LaAlO3 overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.

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  • Received 5 September 2008

DOI:https://doi.org/10.1103/PhysRevLett.102.176805

©2009 American Physical Society

Authors & Affiliations

M. Sing1, G. Berner1, K. Goß1, A. Müller1, A. Ruff1, A. Wetscherek1, S. Thiel2, J. Mannhart2, S. A. Pauli3, C. W. Schneider3, P. R. Willmott3, M. Gorgoi4, F. Schäfers4, and R. Claessen1

  • 1Experimentelle Physik 4, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
  • 2Institute of Physics, Universität Augsburg, Electronic Correlations and Magnetism, Experimentalphysik VI, Universitätsstrasse 1, D-86135 Augsburg, Germany
  • 3Paul Scherrer Institut, CH-5232 Villigen, Switzerland
  • 4Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H., Albert-Einstein-Strasse 15, D-12489 Berlin, Germany

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Vol. 102, Iss. 17 — 1 May 2009

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