• Open Access

Two-Step Mechanism for Low-Temperature Oxidation of Vacancies in Graphene

Johan M. Carlsson, Felix Hanke, Suljo Linic, and Matthias Scheffler
Phys. Rev. Lett. 102, 166104 – Published 23 April 2009

Abstract

We study the oxidation of vacancies in graphene by ab initio atomistic thermodynamics to identify the dominant reaction mechanisms. Our calculations show that the low-temperature oxidation occurs via a two-step process: Vacancies are initially saturated by stable O groups, such as ether (C-O-C) and carbonyl (C=O). The etching is activated by a second step of additional O2 adsorption at the ether groups, forming larger O groups, such as lactone (COC=O) and anhydride (O=COC=O), that may desorb as CO2 just above room temperature. Our studies show that the partial pressure of oxygen is an important external parameter that affects the mechanisms of oxidation and that allows us to control the extent of etching.

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  • Received 25 July 2008

DOI:https://doi.org/10.1103/PhysRevLett.102.166104

This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

Authors & Affiliations

Johan M. Carlsson1,*, Felix Hanke1, Suljo Linic1,2, and Matthias Scheffler1

  • 1Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
  • 2Department of Chemical Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA

  • *johanc@fhi-berlin.mpg.de

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Vol. 102, Iss. 16 — 24 April 2009

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