Thermodynamics and Kinetics of Graphene Growth on SiC(0001)

R. M. Tromp and J. B. Hannon
Phys. Rev. Lett. 102, 106104 – Published 13 March 2009

Abstract

The formation of surface phases on the Si-terminated SiC(0001) surface, from the Si-rich (3×3) structure, through the intermediate (1×1) and (3×3)R30° structures, to the C-rich (63×63) phase, and finally epitaxial graphene, has been well documented. But the thermodynamics and kinetics of these phase formations are poorly understood. Using in situ low energy electron microscopy, we show how the phase transformation temperatures can be shifted over several hundred degrees Celsius, and the phase transformation time scales reduced by several orders of magnitude, by balancing the rate of Si evaporation with an external flux of Si. Detailed insight in the thermodynamics allows us to dramatically improve the morphology of the final C-rich surface phases, including epitaxial graphene.

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  • Received 14 November 2008

DOI:https://doi.org/10.1103/PhysRevLett.102.106104

©2009 American Physical Society

Authors & Affiliations

R. M. Tromp and J. B. Hannon

  • IBM T.J. Watson Research Center, Post Office Box 218, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA

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Issue

Vol. 102, Iss. 10 — 13 March 2009

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