Pressure-Induced Electronic Mixing and Enhancement of Ferromagnetic Ordering in EuX (X=Te, Se, S, O) Magnetic Semiconductors

Narcizo M. Souza-Neto, Daniel Haskel, Yuan-Chieh Tseng, and Gerard Lapertot
Phys. Rev. Lett. 102, 057206 – Published 6 February 2009

Abstract

The pressure- and anion-dependent electronic structure of EuX (X=Te, Se, S, O) monochalcogenides is probed with element- and orbital-specific x-ray absorption spectroscopy in a diamond anvil cell. An isotropic lattice contraction enhances the ferromagnetic ordering temperature by inducing mixing of Eu 4f and 5d electronic orbitals. Anion substitution (TeO) enhances competing exchange pathways through spin-polarized anion p states, counteracting the effect of the concomitant lattice contraction. The results have strong implications for efforts aimed at enhancing FM exchange interactions in thin films through interfacial strain or chemical substitutions.

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  • Received 24 September 2008

DOI:https://doi.org/10.1103/PhysRevLett.102.057206

©2009 American Physical Society

Authors & Affiliations

Narcizo M. Souza-Neto1, Daniel Haskel1, Yuan-Chieh Tseng2,1, and Gerard Lapertot3

  • 1Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
  • 2Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201, USA
  • 3Institut Nanosciences et Cryogénie, SPSMS, CEA Grenoble, 38054 Grenoble, France

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Issue

Vol. 102, Iss. 5 — 6 February 2009

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