Controlled Coupling and Occupation of Silicon Atomic Quantum Dots at Room Temperature

M. Baseer Haider, Jason L. Pitters, Gino A. DiLabio, Lucian Livadaru, Josh Y. Mutus, and Robert A. Wolkow
Phys. Rev. Lett. 102, 046805 – Published 27 January 2009

Abstract

It is demonstrated that the silicon atom dangling bond (DB) state serves as a quantum dot. Coulomb repulsion causes DBs separated by 2nm to exhibit reduced localized charge, which enables electron tunnel coupling of DBs. Scanning tunneling microscopy measurements and theoretical modeling reveal that fabrication geometry of multi-DB assemblies determines net occupation and tunnel coupling strength among dots. Electron occupation of DB assemblies can be controlled at room temperature. Electrostatic control over charge distribution within assemblies is demonstrated.

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  • Received 29 August 2008

DOI:https://doi.org/10.1103/PhysRevLett.102.046805

©2009 American Physical Society

Authors & Affiliations

M. Baseer Haider*, Jason L. Pitters, Gino A. DiLabio, Lucian Livadaru*, Josh Y. Mutus*, and Robert A. Wolkow*,†

  • National Institute for Nanotechnology, National Research Council of Canada, 11421 Saskatchewan Drive, Edmonton, Alberta T6G 2M9, Canada†

  • *Also at Department of Physics, University of Alberta, 11322 - 89 Avenue, Edmonton, Alberta T6G 2G7, Canada.
  • RWolkow@ualberta.ca

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Vol. 102, Iss. 4 — 30 January 2009

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