Carrier-Mediated Antiferromagnetic Interlayer Exchange Coupling in Diluted Magnetic Semiconductor Multilayers Ga1xMnxAs/GaAs:Be

J.-H. Chung, S. J. Chung, Sanghoon Lee, B. J. Kirby, J. A. Borchers, Y. J. Cho, X. Liu, and J. K. Furdyna
Phys. Rev. Lett. 101, 237202 – Published 2 December 2008

Abstract

We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga0.97Mn0.03As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers. Polarized neutron reflectivity reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers is AFM. When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by doped charge carriers.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 5 September 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.237202

©2008 American Physical Society

Authors & Affiliations

J.-H. Chung1, S. J. Chung1, Sanghoon Lee1,*, B. J. Kirby2, J. A. Borchers2, Y. J. Cho3, X. Liu3, and J. K. Furdyna3

  • 1Department of Physics, Korea University, Seoul 136-713, Korea
  • 2National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
  • 3Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA

  • *slee3@korea.ac.kr

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 101, Iss. 23 — 5 December 2008

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×