Abstract
We report a method of creating electrostatically induced quantum dots by thermal diffusion of interstitial Mn ions out of a -type (GaMn)As layer into the vicinity of a GaAs quantum well. This approach creates deep, approximately circular, and strongly confined dotlike potential minima in a large () mesa diode structure without need for advanced lithography or electrostatic gating. Magnetotunneling spectroscopy of an individual dot reveals the symmetry of its electronic eigenfunctions and a rich energy level spectrum of Fock-Darwin-like states with an orbital angular momentum component from 0 to 11.
- Received 8 July 2008
DOI:https://doi.org/10.1103/PhysRevLett.101.226807
©2008 American Physical Society