Photoinduced Metal-to-Insulator Transition in a Manganite Thin Film

N. Takubo, I. Onishi, K. Takubo, T. Mizokawa, and K. Miyano
Phys. Rev. Lett. 101, 177403 – Published 23 October 2008

Abstract

A persistent photoinduced metal-to-insulator transition has been confirmed in a manganite thin film, Pr0.55(Ca0.75Sr0.25)0.45MnO3, near a multicritical point by monitoring with transport measurements and x-ray photoemission spectroscopy. Together with the previously reported reverse effect, the photoinduced insulator-to-metal transition, it is found that the relative stability of the metallic and insulating phases interchanges around 80 K in the middle of a very wide hysteresis loop, which is a manifestation of the large potential barrier due to the long-range elastic energy. It is shown that photons are much more effective in overcoming the barrier via the electronically excited intermediate states than via the heat mode.

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  • Received 10 July 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.177403

©2008 American Physical Society

Authors & Affiliations

N. Takubo1,*, I. Onishi1, K. Takubo2, T. Mizokawa2, and K. Miyano1,3

  • 1Research Center for Advanced Science and Technology (RCAST), University of Tokyo, Tokyo 153-8904, Japan
  • 2Department of Physics and Department of Complexity Science and Engineering, University of Tokyo, Kashiwa-no-ha, Chiba 277-8581, Japan
  • 3CREST, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi 332-0012, Japan

  • *Present address: Institute for Solid State Physics, University of Tokyo, Kashiwa-no-ha, Chiba 277-8581, Japan.

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Vol. 101, Iss. 17 — 24 October 2008

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