Abstract
We report first-principles calculations on electron transport through ultrathin silicon films between aluminum electrodes. The passivation of interface Si atoms at one side of the film with hydrogen makes the current-voltage characteristics asymmetric with quasirectifying properties. The low conductivity in this case can be explained by the weakened metal-induced gap states due to the passivation. We also demonstrate that the applied bias changes the strength of Fermi-level pinning for the passivated interface.
- Received 21 December 2007
DOI:https://doi.org/10.1103/PhysRevLett.101.166801
©2008 American Physical Society