Controlled Aggregation of Magnetic Ions in a Semiconductor: An Experimental Demonstration

A. Bonanni, A. Navarro-Quezada, Tian Li, M. Wegscheider, Z. Matěj, V. Holý, R. T. Lechner, G. Bauer, M. Rovezzi, F. D’Acapito, M. Kiecana, M. Sawicki, and T. Dietl
Phys. Rev. Lett. 101, 135502 – Published 25 September 2008
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Abstract

The control on the distribution of magnetic ions into a semiconducting host is crucial for the functionality of magnetically doped semiconductors. Through a structural analysis at the nanoscale, we give experimental evidence that the aggregation of Fe ions in (Ga,Fe)N and consequently the magnetic response of the material are affected by the growth rate and doping with shallow impurities.

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  • Received 23 April 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.135502

©2008 American Physical Society

Authors & Affiliations

A. Bonanni1,*, A. Navarro-Quezada1, Tian Li1, M. Wegscheider1, Z. Matěj2, V. Holý2, R. T. Lechner1, G. Bauer1, M. Rovezzi3, F. D’Acapito3, M. Kiecana4, M. Sawicki4, and T. Dietl4,5

  • 1Institute for Semiconductor and Solid State Physics, Johannes Kepler University, A-4040, Linz, Austria
  • 2Department of Condensed Matter Physics, Charles University, CZ-121 16 Prague, Czech Republic
  • 3INFM-OGG, c/o GILDA CRG-ESRF, Boîte Postale 220, F-38043 Grenoble, France
  • 4Institute of Physics, Polish Academy of Sciences, PL-02-668 Warszawa, Poland
  • 5Institute of Theoretical Physics, University of Warsaw, PL-00-681 Warszawa, Poland

  • *alberta.bonanni@jku.at

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Issue

Vol. 101, Iss. 13 — 26 September 2008

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