Abstract
Epitaxial oxide-Si heterostructures, which integrate the functionality of crystalline oxides with Si technology, are made possible by a submonolayer of Sr deposited on Si (001). We find by electron diffraction studies using single termination Si wafers that this Sr submonolayer replaces the top layer of Si when deposited at . Supported by first-principles calculations, we propose a model for the reaction dynamics of Sr on the Si surface and its effect on oxide epitaxy. This model predicts, and we experimentally confirm, an unexplored pathway to crystalline oxide epitaxy on Si.
- Received 4 May 2008
DOI:https://doi.org/10.1103/PhysRevLett.101.105503
©2008 American Physical Society