Role of Strontium in Oxide Epitaxy on Silicon (001)

J. W. Reiner, K. F. Garrity, F. J. Walker, S. Ismail-Beigi, and C. H. Ahn
Phys. Rev. Lett. 101, 105503 – Published 4 September 2008

Abstract

Epitaxial oxide-Si heterostructures, which integrate the functionality of crystalline oxides with Si technology, are made possible by a submonolayer of Sr deposited on Si (001). We find by electron diffraction studies using single termination Si wafers that this Sr submonolayer replaces the top layer of Si when deposited at 650°C. Supported by first-principles calculations, we propose a model for the reaction dynamics of Sr on the Si surface and its effect on oxide epitaxy. This model predicts, and we experimentally confirm, an unexplored 25°C pathway to crystalline oxide epitaxy on Si.

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  • Received 4 May 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.105503

©2008 American Physical Society

Authors & Affiliations

J. W. Reiner1,*, K. F. Garrity2, F. J. Walker1, S. Ismail-Beigi1,2, and C. H. Ahn1,2

  • 1Department of Applied Physics, Yale University, New Haven, Connecticut 06520-8284, USA
  • 2Department of Physics, Yale University, New Haven, Connecticut 06520-8120, USA

  • *james.reiner@yale.edu

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Vol. 101, Iss. 10 — 5 September 2008

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