Fully Band-Resolved Scattering Rate in MgB2 Revealed by the Nonlinear Hall Effect and Magnetoresistance Measurements

Huan Yang, Yi Liu, Chenggang Zhuang, Junren Shi, Yugui Yao, Sandro Massidda, Marco Monni, Ying Jia, Xiaoxing Xi, Qi Li, Zi-Kui Liu, Qingrong Feng, and Hai-Hu Wen
Phys. Rev. Lett. 101, 067001 – Published 7 August 2008

Abstract

We have measured the normal state temperature dependence of the Hall effect and magnetoresistance in epitaxial MgB2 thin films with variable disorders characterized by the residual resistance ratio RRR ranging from 4.0 to 33.3. A strong nonlinearity of the Hall effect and magnetoresistance have been found in clean samples, and they decrease gradually with the increase of disorders or temperature. By fitting the data to the theoretical model based on the Boltzmann equation and ab initio calculations for a four-band system, for the first time, we derived the scattering rates of these four bands at different temperatures and magnitude of disorders. Our method provides a unique way to derive these important parameters in multiband systems.

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  • Received 21 February 2008

DOI:https://doi.org/10.1103/PhysRevLett.101.067001

©2008 American Physical Society

Authors & Affiliations

Huan Yang1, Yi Liu1, Chenggang Zhuang2,3,4, Junren Shi1,*, Yugui Yao1, Sandro Massidda5, Marco Monni5, Ying Jia1, Xiaoxing Xi3,4, Qi Li3, Zi-Kui Liu4, Qingrong Feng2, and Hai-Hu Wen1,*

  • 1Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100080, P. R. China
  • 2Department of Physics, Peking University, Beijing 100871, P. R. China
  • 3Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
  • 4Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
  • 5SLACS-INFM and Dipartimento di Fisica, Università di Cagliari, I-09042 Monserrato (Ca), Italy

  • *Corresponding authors: experiment and data analysis: hhwen@aphy.iphy.ac.cn (H. H. Wen);theory: jrshi@aphy.iphy.ac.cn (J. R. Shi).

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Vol. 101, Iss. 6 — 8 August 2008

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