Stereodynamics in Dissociative Adsorption of NO on Si(111)

M. Hashinokuchi, M. Okada, H. Ito, T. Kasai, K. Moritani, and Y. Teraoka
Phys. Rev. Lett. 100, 256104 – Published 25 June 2008
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Abstract

We report results of our study on the surface-temperature dependence of the steric effect in the dissociative adsorption of NO on Si(111)(7×7). Data presented here show that, at an incident energy of 58 meV, the reactive sticking probability for the N-end collision is larger than that for the O-end collision. Furthermore, this steric preference is quite sensitive to the surface temperature and the surface coverage. This study shows that the transient surface trapping into a shallow precursor well plays a key role in the stereodynamics of the dissociative adsorption at the low energy region.

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  • Received 27 January 2008

DOI:https://doi.org/10.1103/PhysRevLett.100.256104

©2008 American Physical Society

Authors & Affiliations

M. Hashinokuchi1, M. Okada1,2,*, H. Ito1, T. Kasai1, K. Moritani3, and Y. Teraoka3

  • 1Department of Chemistry, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan
  • 2PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan
  • 3Synchrotron Radiation Research Center, Japan Atomic Energy Agency, Sayo, Hyogo 679-5148, Japan

  • *Corresponding author. okada@chem.sci.osaka-u.ac.jp

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Issue

Vol. 100, Iss. 25 — 27 June 2008

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