Quantum Confinement and Electronic Properties of Tapered Silicon Nanowires

Zhigang Wu, J. B. Neaton, and Jeffrey C. Grossman
Phys. Rev. Lett. 100, 246804 – Published 20 June 2008

Abstract

Using ab initio calculations, structural tapering of silicon nanowires is shown to have a profound effect on their electronic properties. In particular, the electronic structure of small-diameter tapered silicon nanowires is found to have a strong axial dependence, with unoccupied eigenstates being substantially more sensitive to diameter. Moreover, the states corresponding to the highest occupied and the lowest unoccupied states are spatially separated along the wire axis by the tapering-induced charge transfer and a strong electrostatic potential gradient, due to an appreciable variation in quantum confinement strength with diameter.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 26 August 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.246804

©2008 American Physical Society

Authors & Affiliations

Zhigang Wu1,2, J. B. Neaton2,*, and Jeffrey C. Grossman1,†

  • 1Berkeley Nanotechnology and Nanoscience Institute (BNNI), University of California at Berkeley, Berkeley, California 94720, USA
  • 2Molecular Foundry, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

  • *jbneaton@lbl.gov
  • jgrossman@berkeley.edu

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 100, Iss. 24 — 20 June 2008

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×