Electronic Spin Drift in Graphene Field-Effect Transistors

C. Józsa, M. Popinciuc, N. Tombros, H. T. Jonkman, and B. J. van Wees
Phys. Rev. Lett. 100, 236603 – Published 13 June 2008

Abstract

We studied the drift of electron spins under an applied dc electric field in single layer graphene spin valves in a field-effect transport geometry at room temperature. In the metallic conduction regime (n3.5×1016m2), for dc fields of about ±70kV/m applied between the spin injector and spin detector, the spin valve signals are increased or decreased, depending on the direction of the dc field and the carrier type, by as much as ±50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.

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  • Received 18 February 2008

DOI:https://doi.org/10.1103/PhysRevLett.100.236603

©2008 American Physical Society

Authors & Affiliations

C. Józsa1,*, M. Popinciuc2, N. Tombros1, H. T. Jonkman2, and B. J. van Wees1

  • 1Physics of Nanodevices, Zernike Institute for Advanced Materials, University of Groningen, The Netherlands
  • 2Molecular Electronics, Zernike Institute for Advanced Materials, University of Groningen, The Netherlands

  • *C.Jozsa@rug.nl

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Vol. 100, Iss. 23 — 13 June 2008

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