Spin Echoes in the Charge Transport through Phosphorus Donors in Silicon

Hans Huebl, Felix Hoehne, Benno Grolik, Andre R. Stegner, Martin Stutzmann, and Martin S. Brandt
Phys. Rev. Lett. 100, 177602 – Published 30 April 2008

Abstract

The electrical detection of spin echoes via echo tomography is used to observe coherent processes associated with the electrical readout of the spin state of phosphorus donor electrons in silicon near a SiO2 interface. Using the Carr-Purcell pulse sequence, an echo decay with a time constant of 1.7±0.2μs is observed and discussed in terms of decoherence and recombination times. Electrical spin echo tomography thus can be used to study the dynamics of the spin-dependent transport processes, e.g., in realistic spin qubit devices for quantum information processing.

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  • Received 15 January 2008

DOI:https://doi.org/10.1103/PhysRevLett.100.177602

©2008 American Physical Society

Authors & Affiliations

Hans Huebl*, Felix Hoehne, Benno Grolik, Andre R. Stegner, Martin Stutzmann, and Martin S. Brandt

  • Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany

  • *Corresponding author. hans.huebl@unsw.edu.au Present address: Australian Research Council Centre of Excellence for Quantum Computer Technology, School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia.

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Vol. 100, Iss. 17 — 2 May 2008

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