Band-Structure Engineering of Gold Atomic Wires on Silicon by Controlled Doping

Won Hoon Choi, Pil Gyu Kang, Kyung Deuk Ryang, and Han Woong Yeom
Phys. Rev. Lett. 100, 126801 – Published 24 March 2008

Abstract

We report on the systematic tuning of the electronic band structure of atomic wires by controlling the density of impurity atoms. The atomic wires are self-assembled on Si(111) by substitutional gold adsorbates and extra silicon atoms are deposited as the impurity dopants. The one-dimensional electronic band of gold atomic wires, measured by angle-resolved photoemission, changes from a fully metallic to semiconducting one with its band gap increasing above 0.3 eV along with an energy shift as a linear function of the Si dopant density. The gap opening mechanism is suggested to be related to the ordering of the impurities.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 12 July 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.126801

©2008 American Physical Society

Authors & Affiliations

Won Hoon Choi, Pil Gyu Kang, Kyung Deuk Ryang, and Han Woong Yeom*

  • Institute of Physics and Applied Physics and Center for Atomic Wires and Layers, Yonsei University, Seoul 120-749, Korea

  • *yeom@yonsei.ac.kr

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 100, Iss. 12 — 28 March 2008

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review Letters

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×