High Current Density in Light-Emitting Transistors of Organic Single Crystals

Taishi Takenobu, Satria Zulkarnaen Bisri, Tetsuo Takahashi, Masayuki Yahiro, Chihaya Adachi, and Yoshihiro Iwasa
Phys. Rev. Lett. 100, 066601 – Published 13 February 2008

Abstract

We measured the external electroluminescence quantum efficiency (ηext) in light-emitting field-effect transistors (LETs) made of organic single crystals and found that, in the ambipolar transport region, ηext is not degraded up to several hundreds A/cm2 current-density range, which is 2 orders of magnitude larger than that achieved in conventional organic light-emitting diodes. The present result indicates the single-crystal organic LET is a promising device structure that is free from various kinds of nonradiative losses such as exciton dissociation near electrodes and exciton annihilations.

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  • Received 3 August 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.066601

©2008 American Physical Society

Authors & Affiliations

Taishi Takenobu1,2,*, Satria Zulkarnaen Bisri1, Tetsuo Takahashi1, Masayuki Yahiro3, Chihaya Adachi3, and Yoshihiro Iwasa1,2

  • 1Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 2CREST, Japan Science and Technology Corporation, Kawaguchi 332-0012, Japan
  • 3Center for Future Chemistry, Kyushu University, Nishi, Fukuoka 819-0395, Japan

  • *takenobu@imr.tohoku.ac.jp

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Vol. 100, Iss. 6 — 15 February 2008

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