Abstract
The statistical properties of the carrier density profile of graphene in the ground state in the presence of particle-particle interaction and random charged impurity in zero gate voltage has been recently obtained by Najafi et al. [Phys. Rev. E 95, 032112 (2017)]. The nonzero chemical potential () in gated graphene has nontrivial effects on electron-hole puddles, since it generates mass in the Dirac action and destroys the scaling behaviors of the effective Thomas-Fermi-Dirac theory. We provide detailed analysis on the resulting spatially inhomogeneous system in the framework of the Thomas-Fermi-Dirac theory for the Gaussian (white noise) disorder potential. We show that the chemical potential in this system as a random surface destroys the self-similarity, and also the charge field is non-Gaussian. We find that the two-body correlation functions are factorized to two terms: a pure function of the chemical potential and a pure function of the distance. The spatial dependence of these correlation functions is double logarithmic, e.g., the two-point density correlation behaves like (, , and ). The Fourier power spectrum function also behaves like ( and ) in contrast to the ordinary Gaussian rough surfaces for which and ( being the roughness exponent). The geometrical properties are, however, similar to the ungated () case, with the exponents that are reported in the text.
- Received 24 March 2018
DOI:https://doi.org/10.1103/PhysRevE.98.012111
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