Scaling properties of monolayer graphene away from the Dirac point

M. N. Najafi, N. Ahadpour, J. Cheraghalizadeh, and H. Dashti-Naserabadi
Phys. Rev. E 98, 012111 – Published 11 July 2018

Abstract

The statistical properties of the carrier density profile of graphene in the ground state in the presence of particle-particle interaction and random charged impurity in zero gate voltage has been recently obtained by Najafi et al. [Phys. Rev. E 95, 032112 (2017)]. The nonzero chemical potential (μ) in gated graphene has nontrivial effects on electron-hole puddles, since it generates mass in the Dirac action and destroys the scaling behaviors of the effective Thomas-Fermi-Dirac theory. We provide detailed analysis on the resulting spatially inhomogeneous system in the framework of the Thomas-Fermi-Dirac theory for the Gaussian (white noise) disorder potential. We show that the chemical potential in this system as a random surface destroys the self-similarity, and also the charge field is non-Gaussian. We find that the two-body correlation functions are factorized to two terms: a pure function of the chemical potential and a pure function of the distance. The spatial dependence of these correlation functions is double logarithmic, e.g., the two-point density correlation behaves like D2(r,μ)μ2expaDlnlnrβDαD (αD=1.82, βD=0.263, and aD=0.955). The Fourier power spectrum function also behaves like ln[S(q)]=βSaSlnqaS+2lnμ (aS=3.0±0.1 and βS=2.08±0.03) in contrast to the ordinary Gaussian rough surfaces for which aS=1 and βS=12(1+α)1 (α being the roughness exponent). The geometrical properties are, however, similar to the ungated (μ=0) case, with the exponents that are reported in the text.

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  • Received 24 March 2018

DOI:https://doi.org/10.1103/PhysRevE.98.012111

©2018 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
  1. Physical Systems
Statistical Physics & ThermodynamicsCondensed Matter, Materials & Applied Physics

Authors & Affiliations

M. N. Najafi1,*, N. Ahadpour1, J. Cheraghalizadeh1,†, and H. Dashti-Naserabadi2,‡

  • 1Department of Physics, University of Mohaghegh Ardabili, P.O. Box 179, Ardabil, Iran
  • 2School of Physics, Korea Institute for Advanced Study, Seoul 130-722, South Korea

  • *morteza.nattagh@gmail.com
  • jafarcheraghalizadeh@gmail.com
  • h.dashti82@gmail.com

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Issue

Vol. 98, Iss. 1 — July 2018

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