Refractory period of an excitable semiconductor laser with optical injection

B. Garbin, A. Dolcemascolo, F. Prati, J. Javaloyes, G. Tissoni, and S. Barland
Phys. Rev. E 95, 012214 – Published 26 January 2017

Abstract

Injection-locked semiconductor lasers can be brought to a neuronlike excitable regime when parameters are set close to the unlocking transition. Here we study experimentally the response of this system to repeated optical perturbations and observe the existence of a refractory period during which perturbations are not able to elicit an excitable response. The results are analyzed via simulations of a set of dynamical equations which reproduced adequately the experimental results.

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  • Received 4 July 2016
  • Corrected 2 February 2017

DOI:https://doi.org/10.1103/PhysRevE.95.012214

©2017 American Physical Society

Physics Subject Headings (PhySH)

Nonlinear DynamicsAtomic, Molecular & OpticalPhysics Education ResearchInterdisciplinary PhysicsStatistical Physics & ThermodynamicsGeneral PhysicsNetworks

Corrections

2 February 2017

Erratum

Publisher's Note: Refractory period of an excitable semiconductor laser with optical injection [Phys. Rev. E 95, 012214 (2017)]

B. Garbin, A. Dolcemascolo, F. Prati, J. Javaloyes, G. Tissoni, and S. Barland
Phys. Rev. E 95, 029901 (2017)

Authors & Affiliations

B. Garbin1,2,*, A. Dolcemascolo1,3, F. Prati3,4, J. Javaloyes5, G. Tissoni1, and S. Barland1

  • 1Université Côte d'Azur-CNRS, Institut Non Linéaire de Nice, France
  • 2The Dodd-Walls Centre for Photonic and Quantum Technologies, Department of Physics, The University of Auckland, Auckland 1142, New Zealand
  • 3Dipartimento di Scienza e Alta Tecnologia, Università dell'Insubria, via Valleggio 11, I-22100 Como, Italy
  • 4CNISM, Research Unit of Como, via Valleggio 11, I-22100 Como, Italy
  • 5Departament de Física, Universitat de les Illes Baleares, C/ Valldemossa km 7.5, 07122 Mallorca, Spain

  • *Corresponding author: b.garbin@auckland.ac.nz

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Issue

Vol. 95, Iss. 1 — January 2017

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