Abstract
We formulate and implement a generalized island-dynamics model of epitaxial growth based on the level-set technique to include the effect of an additional energy barrier for the attachment and detachment of atoms at step edges. For this purpose, we invoke a mixed, Robin-type, boundary condition for the flux of adsorbed atoms (adatoms) at each step edge. In addition, we provide an analytic expression for the requisite equilibrium adatom concentration at the island boundary. The only inputs are atomistic kinetic rates. We present a numerical scheme for solving the adatom diffusion equation with such a mixed boundary condition. Our simulation results demonstrate that mounds form when the step-edge barrier is included, and that these mounds steepen as the step-edge barrier increases.
- Received 15 May 2014
DOI:https://doi.org/10.1103/PhysRevE.90.022404
©2014 American Physical Society