Voltage-induced defect mode coupling in a one-dimensional photonic crystal with a twisted-nematic defect layer

Ivan V. Timofeev, Yu-Ting Lin, Vladimir A. Gunyakov, Sergey A. Myslivets, Vasily G. Arkhipkin, Stepan Ya. Vetrov, Wei Lee, and Victor Ya. Zyryanov
Phys. Rev. E 85, 011705 – Published 17 January 2012

Abstract

Defect modes are investigated in a band gap of an electrically tunable one-dimensional photonic crystal infiltrated with a twisted-nematic liquid crystal. Their frequency shift and interference under applied voltage are studied both experimentally and theoretically. We deal with the case where the defect layer thickness is much larger than the wavelength (i.e., the Mauguin condition). It is shown theoretically that the defect modes could have a complex structure with elliptic polarization. Two series of polarized modes are coupled with each other and exhibit an avoided crossing phenomenon in the case of opposite parity.

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  • Received 21 October 2011

DOI:https://doi.org/10.1103/PhysRevE.85.011705

©2012 American Physical Society

Authors & Affiliations

Ivan V. Timofeev1,2,*, Yu-Ting Lin3, Vladimir A. Gunyakov1,2, Sergey A. Myslivets1, Vasily G. Arkhipkin1,2, Stepan Ya. Vetrov2, Wei Lee4,5, and Victor Ya. Zyryanov1,6

  • 1L. V. Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch of the Russian Academy of Sciences, Krasnoyarsk 660036, Russia
  • 2Siberian Federal University, Krasnoyarsk 660041, Russia
  • 3Master Program in Nanotechnology, Chung Yuan Christian University, Chung-Li 32023, Taiwan
  • 4Department of Physics, Chung Yuan Christian University, Chung-Li 32023, Taiwan
  • 5Center for Nanotechnology, Chung Yuan Christian University, Chung-Li 32023, Taiwan
  • 6Siberian State Aerospace University, Krasnoyarsk 660014, Russia

  • *Corresponding address: L. V. Kirensky Institute of Physics, Krasnoyarsk Scientific Centre, SB RAS, Krasnoyarsk, 660036, Russia; tiv@iph.krasn.ru

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Vol. 85, Iss. 1 — January 2012

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