Asymptotic analysis of the Gunn effect with realistic boundary conditions

L. L. Bonilla, I. R. Cantalapiedra, G. Gomila, and J. M. Rubí
Phys. Rev. E 56, 1500 – Published 1 August 1997
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Abstract

A general asymptotic analysis of the Gunn effect in n-type GaAs under general boundary conditions for metal-semiconductor contacts is presented. Depending on the parameter values in the boundary condition of the injecting contact, different types of waves mediate the Gunn effect. The periodic current oscillation typical of the Gunn effect may be caused by moving charge-monopole accumulation or depletion layers, or by low- or high-field charge-dipole solitary waves. A new instability caused by multiple shedding of (low-field) dipole waves is found. In all cases the shape of the current oscillation is described in detail: we show the direct relationship between its major features (maxima, minima, plateaus, etc.) and several critical currents (which depend on the values of the contact parameters). Our results open the possibility of measuring contact parameters from the analysis of the shape of the current oscillation.

  • Received 13 March 1997

DOI:https://doi.org/10.1103/PhysRevE.56.1500

©1997 American Physical Society

Authors & Affiliations

L. L. Bonilla

  • Escuela Politécnica Superior, Universidad Carlos III de Madrid, Butarque 15, 28911 Leganés, Spain

I. R. Cantalapiedra

  • Departament de Física Aplicada, Universitat Politécnica de Catalunya, Gregorio Marañón 44, 08028 Barcelona, Spain

G. Gomila and J. M. Rubí

  • Department de Física Fonamental, Universitat de Barcelona, Diagonal 647, 08028 Barcelona, Spain

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Vol. 56, Iss. 2 — August 1997

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