Electrical resistivity calculations in dense plasmas

We present calculations of electrical resistivity in dense plasmas using the average-atom model. The Born approximation is proposed to improve the computations especially in the hot domain of the density and temperature plane. Both the nonrelativistic and relativistic regimes are considered. Numerical examples are given.

Figure 1

Electrical conductivity of solid density lithium plasma as a function of temperature calculated using the quantum average-atom model without the Born correction (Wo Born) and with the Born correction (Wi Born). We compare these calculations with the Kramers-Kubo-Greenwood (KKG) and the Spitzer approximations.

Figure 2

Electrical conductivity of solid density aluminum plasma as a function of temperature calculated using the quantum average-atom model without the Born correction (Wo Born) and with the Born correction (Wi Born). We compare these calculations with the Kramers-Kubo-Greenwood (KKG) and the Spitzer approximations.

Figure 3

Average ionization of solid-density Li and Al plasmas as a function of temperature using the quantum average-atom model.