Improved treatment of blocking effect at finite temperature

N. Quang Hung, N. Dinh Dang, and L. T. Quynh Huong
Phys. Rev. C 94, 024341 – Published 30 August 2016

Abstract

The blocking effect caused by the odd particle on the pairing properties of systems with an odd number of fermions at finite temperature interacting via the monopole pairing force is studied within several approximations. The results are compared with the predictions obtained by using the exact solutions of the pairing Hamiltonian. The comparison favors the approximation with the odd particle occupying the top level, which is the closest to the Fermi surface and whose occupation number decreases with increasing temperature.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 4 July 2016

DOI:https://doi.org/10.1103/PhysRevC.94.024341

©2016 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
  1. Techniques
Nuclear Physics

Authors & Affiliations

N. Quang Hung1,*, N. Dinh Dang2,3,†, and L. T. Quynh Huong1,4,5

  • 1Institute of Research and Development, Duy Tan University, K7/25 Quang Trung, Danang City, Vietnam
  • 2Quantum Hadron Physics Laboratory, RIKEN Nishina Center for Accelerator-Based Science, 2-1 Hirosawa, Wako City, 351-0198 Saitama, Japan
  • 3Institute for Nuclear Science and Technique, Hanoi, Vietnam
  • 4Department of Natural Science and Technology, University of Khanh Hoa, Nha Trang City, Khanh Hoa Province, Vietnam
  • 5Faculty of Physics and Engineering Physics, Ho Chi Minh University of Science, Ho Chi Minh City, Vietnam

  • *nqhungdtu@gmail.com
  • dang@riken.jp

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 94, Iss. 2 — August 2016

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review C

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×