Abstract
Recently, the oxide semiconductor nanoplates with an ultrahigh mobility demonstrated superior ultrafast photoelectronic properties of which physical origins are hotly studied theoretically and experimentally. Here we grew the crystals via the chemical vapor transport method. The crystal exhibits an ultrahigh Hall mobility and a giant magnetoresistance that are comparable with those in nanoplates. MR data clearly shows Shubnikov–de Haas (SdH) oscillations. Systematic analysis of SdH oscillation verifies that the electrical carrier in is a conventional Schrödinger fermion and that the Fermi surface of is quasi-two-dimensional-like. Remarkably, the resistivity of is quadratically dependent on temperature from 2 to 300 K, inferring the electron-electron scattering in . Kohler's rule analysis of temperature-dependent MR verifies only electron-electron scattering dominated by the electrical and magnetotransport properties of . Combining first-principle calculations and empirical Landau Fermi liquid theory, we substantiate that the Fermi surface of the electron in is an elongated ellipsoid, as well as that the electron-electron interaction and screening length of are estimated as 7.49 eV and 5.53 Å, respectively. These values are quite large among the conventional doped semiconductors. Our study may shed more light on the physical origin of the ultrafast photoelectric response of .
- Received 27 January 2019
- Revised 18 March 2019
DOI:https://doi.org/10.1103/PhysRevB.99.195143
©2019 American Physical Society