Abstract
We have investigated the magnetic properties of the highly anisotropic layered ferromagnetic semiconductor under hydrostatic pressure with the magnetic field along the easy axis of magnetization. At ambient pressure, undergoes a second-order paramagnetic-to-ferromagnetic phase transition at K. is found to increase sublinearly from 60.4 to 64.9 K as pressure increases from 0 to 1.0 GPa. With the increase in pressure, the transition becomes sharper while magnetization at low field decreases monotonically due to a decrease in magnetocrystalline anisotropy. The weak low-field anomaly at around 48 K, resulting from two-step magnetic ordering, also shifts toward higher temperatures with increasing pressure. The observed increase in and the decrease in magnetization could originate from a change in coupling between the layers and the Cr-I-Cr bond angle with pressure.
- Received 3 January 2019
- Revised 28 March 2019
DOI:https://doi.org/10.1103/PhysRevB.99.180407
©2019 American Physical Society