Tuning the topological insulator states of artificial graphene

H. D. Scammell and O. P. Sushkov
Phys. Rev. B 99, 085419 – Published 14 February 2019

Abstract

We develop a robust, nonperturbative approach to study the band structure of artificial graphene. Artificial graphene, as considered here, is generated by imposing a superlattice structure on top of a two-dimensional hole gas in a semiconductor heterostructure, where the hole gas naturally possesses large spin-orbit coupling. Via tuning of the system parameters we demonstrate how best to exploit the spin-orbit coupling to generate time reversal symmetry protected topological insulator phases. Our major conclusion relates to a second set of topological Dirac bands in the band structure (with spin Chern number C=3), which were not reliably obtainable in previous perturbative approaches to artificial graphene. Importantly, the second Dirac bands host more desirable features than the previously studied first set of Dirac bands (with C=1). Moreover, we find that upon tuning of the system parameters, we can drive the system to the highly desirable regime of the topological flat band. We discuss the possibilities this opens up for exotic, strongly correlated phases.

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  • Received 23 August 2018
  • Revised 19 November 2018

DOI:https://doi.org/10.1103/PhysRevB.99.085419

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

H. D. Scammell and O. P. Sushkov

  • School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia

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Issue

Vol. 99, Iss. 8 — 15 February 2019

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