Abstract
While long-theorized, the direct observation of multiple highly dispersive valence bands has eluded researchers for more than two decades due to a variety of intrinsic and extrinsic factors. Here we report a realization of multiple highly dispersive (330–520 meV) valence bands in pure thin film on a novel substrate—the three-dimensional topological insulator —through the use of angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. The effects of this novel substrate reducing rotational disorder are discussed. Our results provide important considerations for past and future band structure studies as well as the increasingly popular electronic device applications, especially those making use of heterostructures.
- Received 3 October 2018
- Revised 19 December 2018
DOI:https://doi.org/10.1103/PhysRevB.99.045425
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