Protected hole valley states in single-layer MoS2

Fabio Bussolotti, Hiroyo Kawai, Swee Liang Wong, and Kuan Eng Johnson Goh
Phys. Rev. B 99, 045134 – Published 22 January 2019

Abstract

We present an angle-resolved photoemission spectroscopy study of single-layer MoS2 where interaction with a supporting highly ordered pyrolytic graphite substrate was controlled by temperature change, consistent with related modifications in the layer-substrate distance. The impact of interface potential landscape changes on the electronic properties and charge dynamics on the MoS2 layer was evaluated by valence-band dispersion and photoemission line-shape analysis. Our results indicate that the hole states at the K-valley point are essentially unaffected by interface potential, reflecting the strong-in plane localization of the electronic wave function.

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  • Received 21 November 2018

DOI:https://doi.org/10.1103/PhysRevB.99.045134

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Fabio Bussolotti1,*, Hiroyo Kawai1,†, Swee Liang Wong1, and Kuan Eng Johnson Goh1,2,‡

  • 1Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, Singapore 138634
  • 2Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542

  • *Corresponding author: b.fabio@imre.a-star.edu.sg
  • Present address: Institute of High Performance Computing, #16-16 Connexis, 1 Fusionopolis Way, Singapore 138632.
  • kejgoh@yahoo.com

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Issue

Vol. 99, Iss. 4 — 15 January 2019

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