Abstract
Color centers in hexagonal boron nitride have shown enormous promise as single-photon sources, but a clear understanding of the electron-phonon interaction dynamics is critical to developing the material for quantum communications or quantum simulations. We demonstrate photon antibunching in the filtered auto- and cross-correlations between zero-, one-, and two-phonon replicas of defect luminescence. With no background correction, we observe a single-photon purity of in a phonon replica and cross-spectral correlations of between a phonon replica and the zero-phonon line. Moreover, we combine a violation of the Cauchy-Schwarz inequality and a phenomenological model of the phonon-mediated emission cross section to distinguish a low quantum-efficiency defect from phonon replicas of a bright defect.
- Received 20 August 2018
DOI:https://doi.org/10.1103/PhysRevB.99.020101
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