Direct spectroscopic evidence for mixed-valence Tl in the low carrier-density superconductor Pb1xTlxTe

P. Walmsley, C. Liu, A. D. Palczewski, P. Giraldo-Gallo, C. G. Olson, I. R. Fisher, and A. Kaminski
Phys. Rev. B 98, 184506 – Published 15 November 2018

Abstract

Upon doping with Tl the narrow band-gap semiconductor PbTe exhibits anomalously high-temperature superconductivity despite a very low carrier-density as well as signatures of the Kondo effect despite an absence of magnetic moments. These phenomena have been explained by invoking 2e fluctuations of the valence of the Tl dopants, but a direct measurement of the mixed valency implied by such a mechanism has not been reported to date. In this work we present the unambiguous observation of multiple valences of Tl in Tl-doped PbTe via photoemission spectroscopy measurements. It is shown via a quantitative analysis that the suppression of the carrier density in compositions exhibiting superconductivity and Kondo-like behavior can be accounted for by mixed valency, thus arguing against a self-compensation scenario proposed elsewhere for this material and strengthening the case for valence fluctuation models. In addition to the identification of Tl+ and Tl3+ a possible third intermediate local charge-density is suggested by full fits to the data, the origins of which are also discussed but remain unclear.

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  • Received 28 August 2018
  • Revised 16 October 2018

DOI:https://doi.org/10.1103/PhysRevB.98.184506

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

P. Walmsley1, C. Liu2,3, A. D. Palczewski2,4, P. Giraldo-Gallo1,5, C. G. Olson2, I. R. Fisher1, and A. Kaminski2

  • 1Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA
  • 2Ames Laboratory and Department of Physics and Astronomy, Iowa State University, Ames, Iowa 50011, USA
  • 3Department of Physics, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong 518055, China
  • 4Jefferson National Accelerator Facility, Newport News, Virginia 23606, USA
  • 5Department of Physics, Universidad de Los Andes, Bogotá 111711, Colombia

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Issue

Vol. 98, Iss. 18 — 1 November 2018

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