Fraunhofer response and supercurrent spin switching in black phosphorus with strain and disorder

Mohammad Alidoust, Morten Willatzen, and Antti-Pekka Jauho
Phys. Rev. B 98, 184505 – Published 9 November 2018

Abstract

We develop theory models for both ballistic and disordered superconducting monolayer black phosphorus devices in the presence of magnetic exchange field and stress. The ballistic case is studied through a microscopic Bogoliubov–de Gennes formalism, while for the disordered case we formulate a quasiclassical model. Utilizing the two models, we theoretically study the response of supercurrent to an externally applied magnetic field in two-dimensional black phosphorus Josephson junctions. Our results demonstrate that the response of the supercurrent to a perpendicular magnetic field in ballistic samples can deviate from the standard Fraunhofer interference pattern when the Fermi level and mechanical stress are varied. This finding suggests the combination of chemical potential and strain is an efficient external knob to control the current response in highly sensitive strain-effect transistors and superconducting quantum interference devices. We also study the supercurrent in a superconductor-ferromagnet-ferromagnet-superconductor junction where the magnetizations of the two adjacent magnetized regions are uniform with misaligned orientations. We show that the magnetization misalignment can control the excitation of harmonics higher than the first harmonic sinφ (in which φ is the phase difference between the superconductors) in supercurrent and constitutes a full-spin-switching current element. Finally, we discuss possible experimental implementations of our findings. We foresee our models and discussions could provide guidelines to experimentalists in designing devices and future investigations.

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  • Received 16 July 2018

DOI:https://doi.org/10.1103/PhysRevB.98.184505

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Mohammad Alidoust1, Morten Willatzen2,3, and Antti-Pekka Jauho4

  • 1Department of Physics, K. N. Toosi University of Technology, Tehran 15875-4416, Iran
  • 2Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 30 Xueyuan Road, Haidian District, Beijing 100083, China
  • 3Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark
  • 4Center for Nanostructured Graphene, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark

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Issue

Vol. 98, Iss. 18 — 1 November 2018

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