Abstract
We use above-band-gap optical excitation, via a 1047-nm laser, to hyperpolarize the spins in low-doped () natural abundance silicon at 4.2 K and 6.7 T, and inductively detect the resulting NMR signal. The 30-kHz spectral linewidth observed is dramatically larger than the 600-Hz linewidth observed from a -enriched silicon crystal. We show that the broadening is consistent with previous electron-nuclear double-resonance results showing discrete isotope mass effect contributions to the donor hyperfine coupling. A secondary source of broadening is likely due to variations in the local strain, induced by the random distribution of different isotopes in natural silicon. The nuclear spin and the buildup time for the optically induced hyperpolarization in the natural abundance silicon sample were observed to be and s, respectively, significantly shorter than the values previously measured in -enriched samples under the same conditions. We measured the and hyperpolarization buildup time for the signal in natural abundance silicon at 9.4 T to be and s, respectively. The shorter buildup and nuclear spin times at high field are likely due to the shorter electron spin , which drives nuclear spin relaxation via nonsecular hyperfine interactions. At 6.7 T, the phosphorus nuclear spin was ms at 4.2 K, a factor of 4 shorter than in -enriched crystals. This was observed to shorten to ms in the presence of the infrared laser.
- Received 1 August 2018
- Revised 8 October 2018
DOI:https://doi.org/10.1103/PhysRevB.98.180405
©2018 American Physical Society