Defect sizing, separation, and substrate effects in ion-irradiated monolayer two-dimensional materials

Pierce Maguire, Daniel S. Fox, Yangbo Zhou, Qianjin Wang, Maria O'Brien, Jakub Jadwiszczak, Conor P. Cullen, John McManus, Samuel Bateman, Niall McEvoy, Georg S. Duesberg, and Hongzhou Zhang
Phys. Rev. B 98, 134109 – Published 18 October 2018
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Abstract

Precise and scalable defect engineering of two-dimensional (2D) nanomaterials is acutely sought after in contemporary materials science. Here, we present defect engineering in monolayer graphene and molybdenum disulfide (MoS2) by irradiation with noble gas ions at 30 keV. Two ion species of different masses were used in a gas field ion source microscope: helium (He+) and neon (Ne+). A detailed Raman spectroscopy study was performed and a defect activation model applied with marked differences between the ion systems at a given dose. We propose that disparities between the ion systems are explained by different defect yields and defect sizes. Expanding on existing models, we suggest that the average defect size is smaller for supported than freestanding graphene and that the rate of defect production is larger. We infer that low-energy secondary atoms from the substrate play a significant role in defect production, creating smaller defects relative to those created by the primary ion beam. Furthermore, a similar model was also applied to supported MoS2, another promising member of the 2D material family. Defect yields for both ions were obtained for MoS2, demonstrating their different interaction with the material and facilitating comparison with other irradiation conditions in the literature.

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  • Received 27 July 2017
  • Revised 25 September 2018

DOI:https://doi.org/10.1103/PhysRevB.98.134109

©2018 American Physical Society

Physics Subject Headings (PhySH)

Accelerators & BeamsCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Pierce Maguire1,2, Daniel S. Fox1,2, Yangbo Zhou1,2,3, Qianjin Wang4, Maria O'Brien2,5, Jakub Jadwiszczak1,2, Conor P. Cullen2,5, John McManus2,5, Samuel Bateman1,2, Niall McEvoy2,5, Georg S. Duesberg2,5,6, and Hongzhou Zhang1,2,*

  • 1School of Physics, Trinity College Dublin, Dublin 2, D02 PN40, Ireland
  • 2AMBER Centre, CRANN Institute, Trinity College Dublin, Dublin 2, D02 PN40, Ireland
  • 3School of Material Science and Engineering, Nanchang University, Youxun W Rd, Xinjian Qu, Nanchang Shi, 330031 Jiangxi Sheng, People's Republic of China
  • 4National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, Jiangsu Province, People's Republic of China
  • 5School of Chemistry, Trinity College Dublin, Dublin 2, D02 PN40, Ireland
  • 6Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Werner-Heisenberg-Weg 39, 85577 Neubiberg, Germany

  • *Corresponding author: Hongzhou.Zhang@tcd.ie

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Issue

Vol. 98, Iss. 13 — 1 October 2018

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