Energy reversal of light- and heavy-hole excitons bound to isoelectronic centers

G. Éthier-Majcher, P. St-Jean, and S. Francoeur
Phys. Rev. B 98, 115431 – Published 18 September 2018

Abstract

Isoelectronic centers in semiconductor hosts offer convenient optical access to both heavy- and light-hole states, thus providing powerful resources for the ultrafast control of electron or hole spins. From a detailed analysis of the fine structure of excitons bound to isoelectronic defects of Cs symmetry formed by two nitrogen impurities in GaAs, we demonstrate that the lowest energy states, normally exhibiting a strongly dominant heavy-hole character, can be reversed to a dominant light-hole character by the strain found in the vicinity of the emitter. This reversal suggests that strain could be used to engineer the orbital composition and ordering of excitonic states, allowing enhanced optical control over spin states.

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  • Received 23 May 2018

DOI:https://doi.org/10.1103/PhysRevB.98.115431

©2018 American Physical Society

Physics Subject Headings (PhySH)

Quantum Information, Science & TechnologyCondensed Matter, Materials & Applied Physics

Authors & Affiliations

G. Éthier-Majcher, P. St-Jean, and S. Francoeur

  • Département de Génie Physique, Polytechnique Montréal, Montréal, Québec H3C 3A7, Canada

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Issue

Vol. 98, Iss. 11 — 15 September 2018

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