Optical harmonic generation in monolayer group-VI transition metal dichalcogenides

Anton Autere, Henri Jussila, Andrea Marini, J. R. M. Saavedra, Yunyun Dai, Antti Säynätjoki, Lasse Karvonen, He Yang, Babak Amirsolaimani, Robert A. Norwood, Nasser Peyghambarian, Harri Lipsanen, Khanh Kieu, F. Javier García de Abajo, and Zhipei Sun
Phys. Rev. B 98, 115426 – Published 17 September 2018
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Abstract

Monolayer transition metal dichalcogenides (TMDs) exhibit high nonlinear optical (NLO) susceptibilities. Experiments on MoS2 have indeed revealed very large second-order (χ(2)) and third-order (χ(3)) optical susceptibilities. However, third-harmonic generation results of other layered TMDs have not been reported. Furthermore, the reported χ(2) and χ(3) of MoS2 vary by several orders of magnitude, and a reliable quantitative comparison of optical nonlinearities across different TMDs has remained elusive. Here, we investigate second- and third-harmonic generation, and three-photon photoluminescence in TMDs. Specifically, we present an experimental study of χ(2) and χ(3) of four common TMD materials (MoS2, MoSe2, WS2, and WSe2) by placing different TMD flakes in close proximity to each other on a common substrate, allowing their NLO properties to be accurately obtained from a single measurement. χ(2) and χ(3) of the four monolayer TMDs have been compared, indicating that they exhibit distinct NLO responses. We further present theoretical simulations of these susceptibilities in qualitative agreement with the measurements. Our comparative studies of the NLO responses of different two-dimensional layered materials allow us to select the best candidates for atomic-scale nonlinear photonic applications, such as frequency conversion and all-optical signal processing.

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  • Received 30 October 2017
  • Revised 10 August 2018

DOI:https://doi.org/10.1103/PhysRevB.98.115426

©2018 American Physical Society

Physics Subject Headings (PhySH)

Atomic, Molecular & OpticalCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Anton Autere1, Henri Jussila1, Andrea Marini2, J. R. M. Saavedra2, Yunyun Dai1, Antti Säynätjoki1,3, Lasse Karvonen1, He Yang1, Babak Amirsolaimani4, Robert A. Norwood4, Nasser Peyghambarian1,3,4, Harri Lipsanen1, Khanh Kieu4, F. Javier García de Abajo2,5, and Zhipei Sun1,6,*

  • 1Department of Electronics and Nanoengineering, Aalto University, P.O. Box 13500, FI-00076 Aalto, Finland
  • 2ICFO-Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels, Barcelona, Spain
  • 3Institute of Photonics, University of Eastern Finland, Yliopistokatu 7, FI-80101 Joensuu, Finland
  • 4College of Optical Sciences, University of Arizona, 1630 East University Boulevard, Tucson, Arizona 85721, USA
  • 5ICREA-Institució Catalana de Recerca i Estudis Avançats, Passeig Lluís Companys 23, 08010 Barcelona, Spain
  • 6QTF Centre of Excellence, Department of Applied Physics, Aalto University, FI-00076 Aalto, Finland

  • *zhipei.sun@aalto.fi

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Issue

Vol. 98, Iss. 11 — 15 September 2018

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