Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview

Gautam Gaddemane, William G. Vandenberghe, Maarten L. Van de Put, Shanmeng Chen, Sabyasachi Tiwari, Edward Chen, and Massimo V. Fischetti
Phys. Rev. B 98, 115416 – Published 7 September 2018
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Abstract

Recent ab initio theoretical calculations of the electrical performance of several two-dimensional materials predict a low-field carrier mobility that spans several orders of magnitude (from 26000 to 35 cm2V1s1, for example, for the hole mobility in monolayer phosphorene) depending on the physical approximations used. Given this state of uncertainty, we review critically the physical models employed, considering phosphorene, a group-V material, as a specific example. We argue that the use of the most accurate models results in a calculated performance that is at the disappointing lower end of the predicted range. We also employ first-principles methods to study high-field transport characteristics in monolayer and bilayer phosphorene. For thin multilayer phosphorene we confirm the most disappointing results, with a strongly anisotropic carrier mobility that does not exceed 30 cm2V1s1 at 300 K for electrons along the armchair direction. We also discuss the dependence of low-field carrier mobility on the thickness of multilayer phosphorene.

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  • Received 30 January 2018
  • Revised 12 July 2018

DOI:https://doi.org/10.1103/PhysRevB.98.115416

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Gautam Gaddemane1, William G. Vandenberghe1, Maarten L. Van de Put1, Shanmeng Chen1, Sabyasachi Tiwari1, Edward Chen2, and Massimo V. Fischetti1

  • 1Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W. Campbell Rd., Richardson, Texas 75080, USA
  • 2Corporate Research, Taiwan Semiconductor Manufacturing Company Ltd. 168, Park Ave. II, Hsinchu Science Park, Hsinchu 300-75, Taiwan, Republic of China

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Issue

Vol. 98, Iss. 11 — 15 September 2018

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