Exfoliation energy, quasiparticle band structure, and excitonic properties of selenium and tellurium atomic chains

Eesha Andharia, Thaneshwor P. Kaloni, Gregory J. Salamo, Shui-Qing Yu, Hugh O. H. Churchill, and Salvador Barraza-Lopez
Phys. Rev. B 98, 035420 – Published 13 July 2018

Abstract

Effects that are not captured by the generalized-gradient density-functional theory have a prominent effect on the structural binding and on the electronic and optical properties of reduced-dimensional and weakly bound materials. Here, we report the exfoliation energy of selenium and tellurium atomic chains with nonempirical van der Waals corrections, and their electronic and optical properties with the GW and Bethe-Salpeter formalisms. The exfoliation energy is found to be within 0.547–0.719 eV/u.c. for the selenium atomic chain, and 0.737–0.926 eV/u.c. for the tellurium atomic chain (where u.c. stands for unit cell), depending on the approximation for the van der Waals interaction and the numerical tool chosen. The GW electronic band gap turned out to be 5.22–5.47 (4.44–4.59) eV for the Se (Te) atomic chains, with the lowest bound obtained with the Godby-Needs (GN), and the upper bound to the Hybertsen-Louie (HL) plasmon-pole models (PPMs). The binding energy of the ground-state excitonic state ranges between 2.69 and 2.72 eV for selenium chains within the HL and GN PPM, respectively, and it turned out to be 2.35 eV for tellurium chains with both approximations. The ground-state excitonic wave function is localized within 50 Å along the axis for both types of atomic chains, and its energy lies within the visible spectrum: blue [2.50(GN)–2.78(HL) eV] for selenium and yellow-green [2.09(GN)–2.28(HL) eV] for tellurium, which could be useful for LED applications in the visible spectrum.

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  • Received 10 October 2017
  • Revised 29 June 2018

DOI:https://doi.org/10.1103/PhysRevB.98.035420

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Eesha Andharia1,2,*, Thaneshwor P. Kaloni1,2, Gregory J. Salamo1,2, Shui-Qing Yu3,2, Hugh O. H. Churchill1,2, and Salvador Barraza-Lopez1,2,†

  • 1Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 2Institute of Nanoscale Science and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 3Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

  • *esandhar@uark.edu
  • sbarraza@uark.edu

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Issue

Vol. 98, Iss. 3 — 15 July 2018

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