Strong enhancement of the Edelstein effect in f-electron systems

Robert Peters and Youichi Yanase
Phys. Rev. B 97, 115128 – Published 13 March 2018

Abstract

The Edelstein effect occurring in systems with broken inversion symmetry generates a spin polarization when an electric field is applied, which is most advantageous in spintronics applications. Unfortunately, it became apparent that this kind of magnetoelectric effect is very small in semiconductors. We here demonstrate that correlation effects can strongly enhance the magnetoelectric effect. Particularly, we observe a strong enhancement of the Edelstein effect in f-electron systems close to the coherence temperature, where the f electrons change their character from localized to itinerant. We furthermore show that this enhancement can be explained by a coupling between the conduction electrons and the still localized f electrons.

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  • Received 28 August 2017
  • Revised 26 February 2018

DOI:https://doi.org/10.1103/PhysRevB.97.115128

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Robert Peters* and Youichi Yanase

  • Department of Physics, Kyoto University, Kyoto 606-8502, Japan

  • *peters@scphys.kyoto-u.ac.jp

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Issue

Vol. 97, Iss. 11 — 15 March 2018

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