Conduction-band valley spin splitting in single-layer H-Tl2O

Yandong Ma, Liangzhi Kou, Aijun Du, Baibiao Huang, Ying Dai, and Thomas Heine
Phys. Rev. B 97, 035444 – Published 31 January 2018
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Abstract

Despite numerous studies, coupled spin and valley physics is currently limited to two-dimensional (2D) transition-metal dichalcogenides (TMDCs). Here, we predict an exceptional 2D valleytronic material associated with the spin-valley coupling phenomena beyond 2D TMDCs—single-layer (SL) H-Tl2O. It displays large valley spin splitting (VSS), significantly larger than that of 2D TMDCs, and a finite band gap, which are both critically attractive for the integration of valleytronics and spintronics. More importantly, in sharp contrast to all the experimentally confirmed 2D valleytronic materials, where the strong valence-band VSS (0.15–0.46 eV) supports the spin-valley coupling, the VSS in SL H-Tl2O is pronounced in its conduction band (0.61 eV), but negligibly small in its valence band (21 meV), thus opening a way for manipulating the coupled spin and valley physics. Moreover, SL H-Tl2O possesses extremely high carrier mobility, as large as 9.8×103cm2V1s1.

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  • Received 1 December 2017

DOI:https://doi.org/10.1103/PhysRevB.97.035444

©2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsGeneral Physics

Authors & Affiliations

Yandong Ma1, Liangzhi Kou2, Aijun Du2, Baibiao Huang1, Ying Dai1,*, and Thomas Heine3,†

  • 1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Street 27, 250100 Jinan, People's Republic of China
  • 2School of Chemistry, Physics and Mechanical Engineering Faculty, Queensland University of Technology, Garden Point Campus, QLD 4001, Brisbane, Australia
  • 3Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Universität Leipzig, Linnéstrasse 2, 04103 Leipzig, Germany

  • *daiy60@sdu.edu.cn
  • thomas.heine@uni-leipzig.de

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Issue

Vol. 97, Iss. 3 — 15 January 2018

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