Abstract
We theoretically demonstrate that the in-plane magnetization-induced quantum anomalous Hall effect (QAHE) can be realized in the atomic crystal layers of group-V elements with a buckled honeycomb lattice. Based on tight-binding models with parameters being extracted from first-principles results, we show that for weak and strong spin-orbit couplings, the systems harbor QAHEs with Chern numbers of and , respectively. For phases, we find the critical magnetization to realize QAHE can be extremely small by tuning the spin-orbit coupling strength. For phases, we find that although the critical magnetization is larger, it can be decreased effectively by strain. Moreover, the band gap is large enough for a room-temperature observation. These features suggest that it is experimentally feasible to realize high-temperature QAHEs from in-plane magnetization in the atomic crystal layers of group-V elements.
- Received 6 June 2017
- Revised 31 October 2017
DOI:https://doi.org/10.1103/PhysRevB.96.241103
©2017 American Physical Society