Hydrogen-induced sp2sp3 rehybridization in epitaxial silicene

Dmytro Solonenko, Volodymyr Dzhagan, Seymur Cahangirov, Cihan Bacaksiz, Hasan Sahin, Dietrich R. T. Zahn, and Patrick Vogt
Phys. Rev. B 96, 235423 – Published 14 December 2017
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Abstract

We report on the hydrogenation of (3×3)/(4×4) silicene epitaxially grown on Ag(111) studied by in situ Raman spectroscopy and state-of-the-art ab initio calculations. Our results demonstrate that hydrogenation of (3×3)/(4×4) silicene leads to the formation of two different atomic structures which exhibit distinct spectral vibrational modes. Raman selection rules clearly show that the Si atoms undergo a rehybridization in both cases from a mixed sp2sp3 to a dominating sp3 state increasing the distance between the two silicene sublattices. This results in a softening of the in-plane and a stiffening of the out-of-plane phonon modes. Nevertheless, hydrogenated epitaxial silicene retains a two-dimensional nature and hence can be considered as epitaxial silicane. The level of hydrogenation can be determined by the intensity ratio of the Raman modes with different symmetries.

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  • Received 6 October 2017

DOI:https://doi.org/10.1103/PhysRevB.96.235423

©2017 American Physical Society

Physics Subject Headings (PhySH)

General PhysicsCondensed Matter, Materials & Applied Physics

Authors & Affiliations

Dmytro Solonenko1,*, Volodymyr Dzhagan1, Seymur Cahangirov2, Cihan Bacaksiz3, Hasan Sahin4,5, Dietrich R. T. Zahn1, and Patrick Vogt1

  • 1Semiconductor Physics, Chemnitz University of Technology, 09126 Chemnitz, Germany
  • 2UNAM–National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey
  • 3Department of Physics, Izmir Institute of Technology, 35430 Izmir, Turkey
  • 4Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey
  • 5ICTP-ECAR Eurasian Center for Advanced Research, Izmir Institute of Technology, 35430, Izmir, Turkey

  • *dmytro.solonenko@physik.tu-chemnitz.de

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Issue

Vol. 96, Iss. 23 — 15 December 2017

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