Temperature-dependent np transition in a three-dimensional Dirac semimetal Na3Bi thin film

Chang Liu, Jack Hellerstedt, Mark T. Edmonds, and Michael S. Fuhrer
Phys. Rev. B 96, 235412 – Published 11 December 2017

Abstract

We study the temperature dependence (77–475 K) of the longitudinal resistivity and Hall coefficient of thin films (thickness 20 nm) of three-dimensional topological Dirac semimetal Na3Bi grown via molecular beam epitaxy. The temperature-dependent Hall coefficient is electronlike at low temperature, but transitions to holelike transport around 200 K. We develop a model of a Dirac band with electron-hole asymmetry in Fermi velocity and mobility (assumed proportional to the square of Fermi velocity) which explains well the magnitude and temperature dependence of the Hall resistivity. We find that the hole mobility is about seven times larger than the electron mobility. In addition, we find that the electron mobility decreases significantly with increasing temperature, suggesting electron-phonon scattering strongly limits the room-temperature mobility.

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  • Received 4 September 2017

DOI:https://doi.org/10.1103/PhysRevB.96.235412

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Chang Liu1,2,3, Jack Hellerstedt1,4, Mark T. Edmonds1,2,3, and Michael S. Fuhrer1,2,3,*

  • 1School of Physics and Astronomy, Monash University, Victoria 3800, Australia
  • 2Monash Centre for Atomically Thin Materials, Monash University, Victoria 3800, Australia
  • 3ARC Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Victoria 3800, Australia
  • 4Institute of Physics of the Czech Academy of Sciences, v.v.i., Cukrovarnicka 10, 162 00 Prague, Czech Republic

  • *michael.fuhrer@monash.edu

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Issue

Vol. 96, Iss. 23 — 15 December 2017

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