Weyl node assisted conductivity switch in interfacial phase-change memory with van der Waals interfaces

Jinwoong Kim, Jeongwoo Kim, Young-Sun Song, Ruqian Wu, Seung-Hoon Jhi, and Nicholas Kioussis
Phys. Rev. B 96, 235304 – Published 11 December 2017

Abstract

The interfacial phase-change memory (iPCM) GeTe/Sb2Te3, a promising candidate for the next generation nonvolatile random-access memories, exhibits fascinating topological properties. Depending on the atomic-layer-stacking sequence of the GeTe block, the iPCM can be either in the SET (Ge-Te-Ge-Te) or RESET (Te-Ge-Ge-Te) states, where the former exhibits ferroelectric polarization and electrical conductivity two orders of magnitude larger than that of the RESET state. Yet, its microscopic origin remains elusive. Here, we predict the emergence of a Weyl semimetal phase in the SET state induced by the ferroelectric polarization which breaks the crystal inversion symmetry. We show that the giant conductivity enhancement of the SET phase is due to the appearance of gapless Weyl nodes. The Ge-Te- or Sb-Te-terminated surfaces of Weyl semimetal iPCM exhibit surface states with completely distinctive topology, where the former consists solely of Fermi arcs while the latter consists of both closed Fermi surface and open Fermi arcs. The iPCM with van der Waals interfaces offers an ideal platform for exploiting the exotic Weyl properties as well as for future memory device applications.

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  • Received 2 July 2017

DOI:https://doi.org/10.1103/PhysRevB.96.235304

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jinwoong Kim1,*, Jeongwoo Kim2, Young-Sun Song3, Ruqian Wu2, Seung-Hoon Jhi3, and Nicholas Kioussis1,†

  • 1Department of Physics and Astronomy, California State University, Northridge, California, USA
  • 2Department of Physics, University of California, Irvine, California, USA
  • 3Department of Physics, Pohang University of Science and Technology, Pohang, Korea

  • *jinwoong.kim@csun.edu
  • nick.kioussis@csun.edu

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Issue

Vol. 96, Iss. 23 — 15 December 2017

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