Bulk and in-gap states in SmB6 revealed by high-field magnetotransport

M. Shahrokhvand, S. Pezzini, M. R. van Delft, U. Zeitler, N. E. Hussey, and S. Wiedmann
Phys. Rev. B 96, 205125 – Published 14 November 2017

Abstract

We report on temperature-dependent magnetotransport experiments of SmB6 single crystals in high magnetic fields up to 33 T. Above the low-temperature plateau region in the zero-field resistivity, we find two distinct gapped regimes. The first is characterized by a temperature-independent gap Δ2 that closes in the presence of a high magnetic field while the second regime, above 8K, features an energy gap Δ1 that is temperature dependent. In the entire temperature range, we observe an overall negative magnetoresistance that does not depend on the orientation of the crystalline plane with respect to the applied magnetic field with a maximum value at T6.2K. The regime of in-gap states is characterized by a low mobility, an anomalously high carrier concentration, and an enhanced nonlocal resistance that exceeds the expected classical value for a two-dimensional metallic conductor. Overall, our data can be interpreted in terms of a transition from bulk to in-gap dominated transport, but evidence of topological surface states is not observed.

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  • Received 18 July 2017
  • Revised 17 October 2017

DOI:https://doi.org/10.1103/PhysRevB.96.205125

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Shahrokhvand*, S. Pezzini, M. R. van Delft, U. Zeitler, N. E. Hussey, and S. Wiedmann

  • High Field Magnet Laboratory (HFML-EMFL), Radboud University, Toernooiveld 7, 6525 ED Nijmegen, The Netherlands and Radboud University, Institute of Molecules and Materials, Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands

  • *maryam.shahrokhvand@ru.nl
  • steffen.wiedmann@ru.nl

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Issue

Vol. 96, Iss. 20 — 15 November 2017

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