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Non-necessity of band inversion process in two-dimensional topological insulators for bulk gapless states and topological phase transitions

Wenjie Xi (奚文杰) and Wei Ku (顧威)
Phys. Rev. B 96, 201110(R) – Published 16 November 2017

Abstract

In commonly employed models for two-dimensional (2D) topological insulators, bulk gapless states are well known to form at the band inversion points where the degeneracy of the states is protected by symmetries. It is thus sometimes quite tempting to consider this feature, the occurrence of gapless states, a result of the band inversion process under protection of the symmetries. Similarly, the band inversion process might even be perceived as necessary to induce 2D topological phase transitions. To clarify these misleading perspectives, we propose a simple model with a flexible Chern number to demonstrate that the bulk gapless states emerge at the phase boundary of topological phase transitions, despite the absence of a band inversion process. Furthermore, the bulk gapless states do not need to occur at the special k points protected by symmetries. Given the significance of these fundamental conceptual issues and their widespread influence, our clarification should generate strong general interests and significant impacts. Furthermore, the simplicity and flexibility of our general model with an arbitrary Chern number should prove useful in a wide range of future studies of topological states of matter.

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  • Received 18 April 2017
  • Revised 25 May 2017

DOI:https://doi.org/10.1103/PhysRevB.96.201110

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Wenjie Xi (奚文杰)1 and Wei Ku (顧威)1,2,3,*

  • 1School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
  • 2Tsung-Dao Lee Institute, Shanghai 200240, China
  • 3Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shanghai 200240, China

  • *Corresponding author: weiku@mailaps.org

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Issue

Vol. 96, Iss. 20 — 15 November 2017

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